jiangsu changjiang electronic s technology co., ltd sot-23 plastic-encapsulate transistors 2SD1306 transistor (npn) applicationlow z frequency amplifier, muting maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector -base voltage 30 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 5 v i c continuous collector current 0.7 a p c collector dissipation 0.15 w r ja thermal resistance from junction to ambient 833 / w t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10ua,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 15 v emitter-base breakdown voltage v (br)ebo i e =10ua, i c =0 5 v collector cut-off current i cbo v cb =20v,i e =0 1 ua emitter cut-off current i ebo v eb =4v,i c =0 1 ua dc current gain h fe * v ce =1v,i c =150ma 250 800 collector-emitter saturation voltage v ce(sat) * i c =500ma,i b =50ma 0.5 v base-emitter voltage v be * v ce =1v,i c =150ma 1 v transition frequency f t * v ce =1v,f=150mhz 250 mhz * pulse test: pulse width 300 s, duty cycle 2.0%. classification of h fe rank d e range 250-500 400-800 marking nd ne so t -23 1. base 2. emitter 3. collector www.cj-elec.com 1 a,jun,2014 www.cj-elec.com c,oct,2014 j c ( t
min m a x min max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ 6 2 7 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 2 a,jun,2014 www.cj-elec.com c,oct,2014
so t -23 tape and reel
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